PART |
Description |
Maker |
BUP200D Q67040-A4420-A2 BUP200-D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free) 3.6 A, 1200 V, N-CHANNEL IGBT, TO-220AB High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-SOIC -55 to 125 由于IGBT的反平行二极管(低正向压降高开关速度低尾电流闭锁免费 From old datasheet system IGBT Duopack (IGBT with Antiparallel ...
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SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
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BUP400D Q67040-A4423-A2 BUP400-D |
IGBT Duopack (IGBT with Antiparallel ... IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) From old datasheet system High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 由于IGBT的反平行二极管(低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
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Siemens Semiconductor G... Infineon Siemens Semiconductor Group SIEMENS AG
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IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
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Toshiba Semiconductor
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IXGH60N60C2 |
HiPerFASTTM IGBT C2-Class High Speed IGBTs 75 A, 600 V, N-CHANNEL IGBT, TO-247AD
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IXYS, Corp.
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IXSM30N60A IXSH30N60 IXSH30N60A IXSM30N60 |
Low VCE(sat) IGBT, High Speed IGBT
|
IXYS[IXYS Corporation]
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GA200NS61U |
600V UltraFast 10-30 kHz Hs Chop S IGBT in a INT-A-Pak package High Side Switch Chopper Module Ultra-Fast Speed IGBT
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IRF[International Rectifier]
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AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
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International Rectifier
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IXSH30N60U1 IXSH30N60AU1 |
From old datasheet system Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability
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IXYS[IXYS Corporation]
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RJH60F7ADPK RJH60F7ADPK-00-T0 |
90 A, 600 V, N-CHANNEL IGBT Silicon N Channel IGBT High Speed Power Switching
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Renesas Electronics Corporation
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RJH60F6DPK RJH60F6DPK-00-T0 |
85 A, 600 V, N-CHANNEL IGBT Silicon N Channel IGBT High Speed Power Switching
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Renesas Electronics Corporation
|
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
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Microsemi Corporation Microsemi, Corp.
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